CT2C4G3S1339M is an 8 GB kit consisting of 4 GB DDR3 Notebook modules that operates at speeds up to 1333 MT/s and has a CL9 latency. It is dual voltage and can operate at 1.35-Volt or 1.5-Volt. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204-Pins and is compatible with computers that take DDR3 SODIMM memory.
CT2C4G3S1339M is an 8 GB kit consisting of 4 GB DDR3 Notebook modules that operates at speeds up to 1333 MT/s and has a CL9 latency. It is dual voltage and can operate at 1.35-Volt or 1.5-Volt. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204-Pins and is compatible with computers that take DDR3 SODIMM memory.
in 1 offers
CT2C4G3S1339M is an 8 GB kit consisting of 4 GB DDR3 Notebook modules that operates at speeds up to 1333 MT/s and has a CL9 latency. It is dual voltage and can operate at 1.35-Volt or 1.5-Volt. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204-Pins and is compatible with computers that take DDR3 SODIMM memory.
CT2C4G3S1339M is an 8 GB kit consisting of 4 GB DDR3 Notebook modules that operates at speeds up to 1333 MT/s and has a CL9 latency. It is dual voltage and can operate at 1.35-Volt or 1.5-Volt. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204-Pins and is compatible with computers that take DDR3 SODIMM memory.
Last updated at 23/07/2024 16:03:54
+ $9.90 delivery
Low stock
originally posted on neweggbusiness.com
originally posted on adorama.com
originally posted on neweggbusiness.com
General | |
Capacity | 8 GB: 2 x 4 GB |
Upgrade Type | System specific |
Memory | |
Type | DRAM memory kit |
Updated 3 months ago
General | |
Capacity | 8 GB: 2 x 4 GB |
Upgrade Type | System specific |
Memory | |
Type | DRAM memory kit |